- 您现在的位置：买卖IC网 > Sheet目录378 > 2SJ687-ZK-E1-AY (Renesas Electronics America)MOSFET P-CH -20V -20A TO-252
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ687
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.
FEATURES
? Low on-state resistance
R DS(on)1 = 7.0 m Ω MAX. (V GS = ? 4.5 V, I D = ? 10 A)
R DS(on)2 = 9.0 m Ω MAX. (V GS = ? 3.0 V, I D = ? 10 A)
R DS(on)3 = 20 m Ω MAX. (V GS = ? 2.5 V, I D = ? 10 A)
? 2.5 V drive available
? Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SJ687-ZK-E1-AY
2SJ687-ZK-E2-AY
Note
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK)
0.27 g TYP.
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
(TO-252)
Drain Current (pulse)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
Note1
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
V DSS
V GSS
I D(DC)
I D(pulse)
P T1
P T2
T ch
T stg
? 20
m 12
m 20
m 60
36
1.0
150
? 55 to + 150
V
V
A
A
W
W
° C
° C
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I AS
E AS
? 20
40
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25 ° C, V DD = ? 10 V, R G = 25 Ω , V GS = ? 12 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18719EJ2V0DS00 (2nd edition)
Date Published May 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
2SK2094TL
MOSFET N-CH 60V 2A DPAK
2SK3018T106
MOSFET N-CH 30V .1A SOT-323
2SK3019TL
MOSFET N-CH 30V .1A SOT416
2SK3479-Z-E2-AZ
MOSFET 100V N-CH TO-263
2SK3480-AZ
MOSFET N-CH 100V MP-25/TO-220
2SK3481-AZ
MOSFET N-CH 100V MP-25/TO-220
2SK3482-AZ
MOSFET N-CH 100V MP-3/TO-251
2SK3483-AZ
MOSFET N-CH 100V MP-3/TO-251
相关代理商/技术参数
2SJ687-ZK-E2-AY
制造商:Renesas Electronics Corporation 功能描述:
2SJ73
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | DUAL | 5MA I(DSS)
2SJ74
制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:P CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
2SJ74_07
制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Low Noise Audio Amplifier Applications
2SJ74BL
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | 6MA I(DSS) | TO-92
2SJ74-BL
功能描述:JFET X34 Pb Small Signal Trans RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
2SJ74GR
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | 2.6MA I(DSS) | TO-92
2SJ74V
制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
